View DMN601DMK07_4970593.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DMN601DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
* * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4)
Mechanical Data
* * * * * * * *
SOT-26
NEW PRODUCT
Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate)
Drain
D2
G1
S1
Body Diode Gate
ESD protected up to 2kV
TOP VIEW
Gate Protection Diode
S2
Source
G2
D1
Equivalent Circuit Per Element
TOP VIEW Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 20 305 800 Units V V mA
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 225 556 -65 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 60 1.0 100 0.5 Typ 1.6 Max 1 10 2.5 2.4 4.0 1.4 50 25 5.0 Unit V A A V ms V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA VDS =10V, ID = 200mA VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN601DMK
Document number: DS30657 Rev. 4 - 2
1 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DMK
ID, DRAIN CURRENT (A)
1.0 0.8 0.6 0.4 0.2 0 0
NEW PRODUCT
1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10
2 VGS(TH), GATE THRESHOLD VOLTAGE (V)
VDS = 10V ID = 1mA Pulsed
1.5
1
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
150
1
0.5
0 -50
-25 25 50 75 100 125 0 Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 0
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN601DMK
Document number: DS30657 Rev. 4 - 2
2 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DMK
NEW PRODUCT
0 TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature
1
|Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current
Ordering Information
Part Number DMN601DMK-7
Notes:
IDR, REVERSE DRAIN CURRENT (A)
(Note 6) Case SOT-26 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D2 G1 S1
K7K YM
S2
K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
G2
D1
Date Code Key Year Code Month Code
2005 S Jan 1 Feb 2
2006 T Mar 3
2007 U Apr 4 May 5
2008 V Jun 6
IDR, REVERSE DRAIN CURRENT (A)
RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE ()
DMN601DMK
Document number: DS30657 Rev. 4 - 2
K7K YM
2009 W Jul 7 Aug 8
2010 X Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
3 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DMK Package Outline Dimensions
A
TOP VIEW
BC
NEW PRODUCT
H K M
J
D
F
L
SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 F 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm
Suggested Pad Layout
E E
Z
G
C
Dimensions Value (in mm) 3.20 Z 1.60 G X 0.55 0.80 Y C 2.40 0.95 E
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN601DMK
Document number: DS30657 Rev. 4 - 2
4 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated

▲Up To Search▲

Price & Availability of DMN601DMK07

	To Download DMN601DMK07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .